Photoluminescence from high-energy heavy ion irradiated C-doped SiO2 thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 179, Issue 2, 2001, Pages 289-293

  Wang, Z G ^a   Xie, E Q ^a,b   Jin, Y F ^a   Chen, X X ^a   Liu, C L ^a   Zhu, Z Y ^a   Hou, M D ^a   Sun, Y M ^a   Liu, J ^a   Wang, Y B ^a  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARBON; ELECTRON ENERGY LEVELS; HEAVY IONS; ION BOMBARDMENT; ION IMPLANTATION; KRYPTON; MONOCHROMATORS; PHOTOLUMINESCENCE; SILICA; THIN FILMS; ULTRAVIOLET RADIATION;

HEAVY ION IRRADIATION;

OPTICAL FILMS;

EID: 0035399940     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00458-X     Document Type: Article

References (19)