A study of the blue photoluminescence emission from thermally-grown, Si+-implanted SiO2 films after short-time annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 106-109

  Skorupa, W ^a   Yankov, R A ^a   Rebohle, L ^a   Frob H ^b   Bohme T ^b   Leo, K ^b   Tyschenko, I E ^c   Kachurin, G A ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Ion beam synthesis; Photoluminescence; Si nanocrystals; Transient annealing

Indexed keywords

ANNEALING; CRYSTAL GROWTH; NANOSTRUCTURED MATERIALS; OPTICAL MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SILICA;

ION BEAM SYNTHESIS; NANOCRYSTALLINE SILICON; TRANSIENT ANNEALING;

ION IMPLANTATION;

EID: 0030566567     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00489-2     Document Type: Article

References (8)

1. T. Shimizu-Iwayama, Y. Terao, A. Kamiya, M. Takeda, S. Nakao and K. Saitoh, Mat. Res. Soc. Symp. Proc. 388 (1995) 253.
2. H.A. Atwater, K.V. Shcheglov, S.S. Wong, K.J. Vahala, R.C. Flagan, M.L. Brongersma and A. Polman, Mat. Res. Soc. Symp. Proc. 316 (1994) 409.
3. T. Komoda, J.P. Kelly, A. Nejim, K.P. Homewood, P.L.F. Hemment and B.J. Sealy, Mat. Res. Soc. Symp. Proc. 358 (1995) 163.
4. J.G. Zhu, C.W. White, J.D. Budai, S.P. Withrow and Y. Chen, Mat. Res. Soc. Symp. Proc. 358 (1995) 175.
5. P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G.F. Cerofolini, L. Meda, E. Grilli and M. Guzzi, Appl. Phys. Lett. 66 (1995) 851.
6. L.-S. Liao, X.-M. Bao, X.-Q. Zheng, N.-S. Li and N.-B. Min, Appl. Phys. Lett. 68 (1996) 850.
7. W. Skorupa, R.A. Yankov, I.E. Tyschenko, H. Fröb, T. Böhme and K. Leo, Appl. Phys. Lett. 68 (1996) 2410.
8. T. Shimizu-Iwayama, K. Fujita, S. Nakao, K. Saitoh, T. Fujita and N. Itoh, J. Appl. Phys. 75 (1994) 7779.