Light-emitting materials fabricated by dual implantation of Si and N into SiO2 films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 149, Issue 3, 1999, Pages 325-330

  Zhao, J ^a   Mao, D S ^a   Lin, Z X ^a   Ding, X Z ^a   Jiang, B Y ^a   Yu, Y H ^a   Liu, X H ^a   Yang, G Q ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

61.72.Ww; 61.80.Jh; 78.55. m; 81.05.Gc; Ion implantation; Light emitting materials; Photoluminescence; SiO2 films

Indexed keywords

ANNEALING; LIGHT EMISSION; MICROSTRUCTURE; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY;

DEPTH PROFILES; DUAL IMPLANTATION;

ION IMPLANTATION;

EID: 0033077804     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00936-7     Document Type: Article

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