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Journal of Crystal Growth

Volumn 165, Issue 4, 1996, Pages 345-350

Silicon incorporation behaviour in GaAs grown on GaAs (111) A by molecular beam epitaxy

(4) Sato, K a,b Fahy, M R a Ashwin, M J a Joyce, B A a

a IMPERIAL COLLEGE LONDON (United Kingdom)

b JAPAN ENERGY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR SPECTROSCOPY; MOLECULAR VIBRATIONS; MORPHOLOGY; SEMICONDUCTOR GROWTH; SILICON; SUBSTRATES; SURFACES; TEMPERATURE;

GALLIUM FLUX RATIO; GROWTH TEMPERATURE; LOCAL VIBRATIONAL MODE SPECTROSCOPY; LOW INCORPORATION COEFFICIENT; SITE OCCUPANCY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030564730 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00219-9 Document Type: Article

Times cited : (13)

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