Current instability in power HEMTs

Semiconductor Science and Technology

Volumn 16, Issue 7, 2001, Pages 562-566

  Dunn, G M ^a   Phillips, A ^b   Topham, P J ^b  

^a UNIVERSITY OF ABERDEEN   (United Kingdom)

^b Marconi Materials Technology Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON MOBILITY; IMPACT IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICON WAFERS;

CURRENT INSTABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035398467     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/7/306     Document Type: Article

References (16)

1. Impact ionisation and light emission in InAlAs/InGaAs heterostructre field effect transistors
2. Avalanche and tunnelling breakdown mechanisms in HEMTS power structures
3. Monte Carlo study of transport along the hereto interface in a field effect transistor
4. Simulation of impact ionisation breakdown in MESFETS
5. Monte Carlo simulation of impact ionisation in MESFETs
6. Monte Carlo method in transport
7. Monte Carlo simulation of transport in technologically significant semiconductors
8. GaAs AlAs and AlGaAs material parameters for use in research and device applications
9. Monte Carlo simulation of impact ionisation and current multiplication in short GaAs p(+)in(+) diodes
10. Ensemble Monte Carlo simulation of an AlGaAs/GaAs heterstructure MIS-like FET
11. MODFET ensemble Monte Carlo model including the quasi-two-dimensional electron gas
12. Theoretical analysis of an AlGaAs/InGaAs pseudomorphic HEMT using an ensemble Monte Carlo simulation
13. Calculation of warm electron transport in AlGaAs/GaAs single heterostructures using a Monte Carlo method
14. Monte Carlo study of electronic transport in AlGaAs/GaAs single well heterostructres