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IEEE Electron Device Letters

Volumn 22, Issue 7, 2001, Pages 351-353

Short channel characteristics of quasi-single-drain MOSFETs

(5) Sugihara, K a Abe, Y a Oishi, T a Miura, N a Tokuda, Y a

a MITSUBISHI ELECTRIC CORPORATION (Japan)

Author keywords

CMOS; Elevated source drain; Epitaxial growth; MOSFET; Single drain; UHV CVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC INSULATORS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; GATES (TRANSISTOR); ION IMPLANTATION;

DRIVABILITY ENHANCEMENT; GATE SIDEWALL SPACERS; SHORT CHANNEL CHARACTERISTICS;

MOSFET DEVICES;

EID: 0035398360 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.930688 Document Type: Article

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.