Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(0 0 1) substrates

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 399-403

  Qu, B ^a,b   Zheng, X H ^a   Wang, Y T ^a   Xu, D P ^a   Lin, S M ^a   Yang, Hui ^a   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

A1. X ray diffraction; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; GRAIN BOUNDARIES; INTERFACES (MATERIALS); LATTICE CONSTANTS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EPILAYERS;

SEMICONDUCTING FILMS;

EID: 0035398172     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00732-1     Document Type: Conference Paper

References (8)