Confirmation of AlGaAs crystal domain inversion using asymmetric wet etching and optical second-harmonic generation methods

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 11 PART A, 1996, Pages

  Xu, Chang Qing ^a   Takemasa, Keizo ^a   Nakamura, Koji ^a   Wada, Hiroshi ^a   Takamori, Takeshi ^a   Okayama, Hideaki ^a   Kamijoh, Takeshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

AlGaAs wavelength converter; Crystal domain inversion; Second harmonic generation

Indexed keywords

CRYSTAL STRUCTURE; DIFFRACTION GRATINGS; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; NONLINEAR OPTICS; SCANNING ELECTRON MICROSCOPY; SECOND HARMONIC GENERATION; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE WAVELENGTH CONVERTER; ASYMMETRIC WET ETCHING; CRYSTAL DOMAIN INVERSION; WAFER BONDING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030285315     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1419     Document Type: Article

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