Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 SUPPL. B, 1998, Pages

  Koh, Shinji ^a   Kondo, Takashi ^a   Ishiwada, Tetsuya ^a   Iwamoto, Chihiro ^a   Ichinose, Hideki ^a   Yaguchi, Hiroyuki ^a   Usami, Takanori ^b   Shiraki, Yasuhiro ^b   Ito, Ryoichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Antiphase domain; Domain inversion; Molecular beam epitaxy; Nonlinear optics; Quasi phase matching; Second harmonic generation; Sublattice reversal

Indexed keywords

CRYSTAL LATTICES; ETCHING; MOLECULAR BEAM EPITAXY; NONLINEAR OPTICS; OPTICAL DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ANTIPHASE DOMAIN; QUASI PHASE MATCHING; SUBLATTICE REVERSAL;

HETEROJUNCTIONS;

EID: 0032295743     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1493     Document Type: Article

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