Plasma-assisted molecular beam epitaxy of ZnO thin films on sapphire substrates with an MgO buffer

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 917-922

  Chen, Y F ^a,b   Ko, H J ^a   Hong, S K ^a   Inaba, K ^c   Segawa, Y ^b   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c RIGAKU CORPORATION   (Japan)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

ALUMINA; CRYSTAL STRUCTURE; INTERFACES (MATERIALS); MAGNESIA; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; WETTING;

PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (MBE);

ZINC OXIDE;

EID: 0035398068     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00928-9     Document Type: Conference Paper

References (7)