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Volumn 9, Issue 4, 2001, Pages 249-258
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The electrical activity of GaN doped with transition metal impurities
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFECTS;
ELECTRONIC PROPERTIES;
ENERGY GAP;
IMPURITIES;
PROBABILITY DENSITY FUNCTION;
SEMICONDUCTOR DOPING;
TRANSITION METALS;
ELECTRICAL ACTIVITY;
GALLIUM NITRIDE;
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EID: 0035394164
PISSN: 09650393
EISSN: None
Source Type: Journal
DOI: 10.1088/0965-0393/9/4/301 Document Type: Article |
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Times cited : (8)
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References (20)
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