An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

Physica B: Condensed Matter

Volumn 248, Issue 1-4, 1998, Pages 74-78

  Howes, P B ^a   Benamara, M ^b   Grey, F ^b   Feidenhansl, R ^a   Nielsen, M ^a   Rasmussen, F B ^a   Baker, J ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b NONE

Author keywords

Semiconductors; Twist grain boundaries; X ray diffraction

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

SEMICONDUCTOR WAFER BONDING;

GRAIN BOUNDARIES;

EID: 0032094042     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00206-3     Document Type: Article

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