Raman scattering studies on low-energy nitrogen-implanted semi-insulating GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 179, Issue 1, 2001, Pages 71-77

  Jayavel, P ^a   Kesavamoorthy, R ^b   Santhakumar, K ^b   Magudapathy, P ^b   Nair, K G M ^b   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Annealing; Fluence; Ion implantation; Raman scattering

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; ION IMPLANTATION; NITROGEN; PHONONS; RAMAN SCATTERING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE ROUGHNESS;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035371053     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00372-X     Document Type: Article

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