Real-time observations of mesa shrinkage process in MBE of GaAs on (1 1 1)B patterned substrates and theoretical analysis

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1119-1124

  Kousai, S ^a   Yamashiki, A ^a   Ogura, T ^a   Nishinaga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DIFFUSION; MATHEMATICAL MODELS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

DIFFUSION COEFFICIENT; INTERSURFACE DIFFUSION MODEL; SURFACE DIFFUSION LENGTH;

MOLECULAR BEAM EPITAXY;

EID: 0033514563     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01178-6     Document Type: Article

References (13)

1. M. Hata, T. Isu, A. Watanabe, Y. Katayama, J. Vac. Sci. Technol. B 8 (1990) 692.
2. F.S. Turco, S. Simhony, K. Kash, D.M. Hwang, T.S. Ravi, E. Kapon, M.C. Tamargo, J. Crystal Growth 104 (1990) 766.
3. X.Q. Shen, T. Nishinaga, Jpn. J. Appl. Phys. 32 (1993) L1117.
4. X.Q. Shen, M. Tanaka, T. Nishinaga, J. Crystal Growth 127 (1993) 932.
5. X.Q. Shen, H.W. Ren, M. Tanaka, T. Nishinaga, J. Crystal Growth 169 (1996) 607.
6. X.Q. Shen, H.W. Ren, T. Nishinaga, J. Crystal Growth 177 (1997) 175.
7. X.Q. Shen, D. Kishimoto, T. Nishinaga, Jpn. J. Appl. Phys. 33 (1994) 11.
8. T. Suzuki, T. Nishinaga, J. Crystal Growth 142 (1994) 49.
9. H. Takarabe, Bachelor Thesis, Department of Electronic Engineering, The University of Tokyo, 1996.
10. T. Nishinaga, X.Q. Shen, D. Kishimoto, J. Crystal Growth 163 (1996) 66.
11. A. Yamashiki, T. Nishinaga, Crystal Res. Technol. 32 (1997) 1049.
12. A. Yamashiki, T. Nishinaga, J. Crystal Growth, to be published.
13. T. Ohno K. Shiraishi, T. Ito, Mater. Res. Soc. Symp. Proc. 326 (1994) 27.