Measured results on symmetric dual-level spiral inductors for RF ICs

IEICE Transactions on Electronics

Volumn E84-C, Issue 6, 2001, Pages 845-848

  Lee, S G ^a   Shin, S B ^a   Ihm, G J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Quality factor; RF ICs; Spiral inductors; Symmetric

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COUPLED CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; NATURAL FREQUENCIES; Q FACTOR MEASUREMENT; RADIO COMMUNICATION;

DUAL LAYER STRUCTURES; SPIRAL INDUCTORS;

ELECTRIC INDUCTORS;

EID: 0035367283     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. A Q-factor enhancement technique for MMIC inductors
2. The modeling, characterization, and design of monolithic inductors for silicon RF IC's
3. Integrated RF and microwave components in BiCMOS technology
4. High Q inductors for wireless applications in a complementary silicon bipolar process
5. Optimization of high-Q integrated inductors for multilevel metal CMOS
6. Multilevel-spiral inductor using VLSI interconnect technology
7. A fully integrated spiral-LC CMOS VCO set with prescaler for GSM and DCS-1800 systems
8. Simple accurate expressions for planar spiral inductances