Electron capture on EL2 in GaAs

Physica Status Solidi (B) Basic Research

Volumn 203, Issue 2, 1997, Pages 459-463

  Neffati, T ^a,b   Bourgoin, J C ^a  

^a UNIVERSITÉ PARIS DESCARTES   (France)

^b UNIVERSITÉ DE CERGY PONTOISE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031515868     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199710)203:2<459::AID-PSSB459>3.0.CO;2-8     Document Type: Article

References (8)

1. G. M. MARTIN and S. MAKRAM-EBEID, in: Deep Centers in Semiconductors, Chap. 6, Ed. S. T. PANTELIDES, Gordon & Breach, New York/London 1986.
2. D. L. LANG and C. H. HENRY, Phys. Rev. Lett. 30, 1525 (1975).
3. D. V. LANG, J. Phys. Soc. Japan 49, Suppl. A, 215 (1980).
4. C. H. HENRY and D. V. LANG, Phys. Rev. B 15, 989 (1977).
5. A. MIRCEA, A. MITONNEAU, J. HALLAIS, and M. JAROS, Phys. Rev. B 16, 3665 (1977).
6. T. MATSUMOTO, P. K. BHATTACHARYA, and M. J. LUDOWISE, Appl. Phys. Lett. 41, 662 (1982).
7. K. HUANG and A. RHYS, Proc. Roy. Soc. 204, 406 (1950).
8. A. ZYLBERSZTJEN, Appl. Phys. Lett. 33, 200 (1978).