Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface

Semiconductor Science and Technology

Volumn 16, Issue 6, 2001, Pages 474-477

  Hastas, N A ^a   Dimitriadis, C A ^a   Logothetidis, S ^a   Angelis, C T ^b   Konofaos, N ^b   Evangelou, E K ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITY OF IOANNINA   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEPOSITION; DIAMOND LIKE CARBON FILMS; ELECTRIC CONDUCTIVITY; ELECTRON EMISSION; ELECTRON GUNS; ELECTRON TUNNELING; HIGH TEMPERATURE EFFECTS; HYSTERESIS; MAGNETRON SPUTTERING; OHMIC CONTACTS; SILICON; STOICHIOMETRY; TITANIUM NITRIDE; VOLTAGE MEASUREMENT;

ELECTRON-GUN EVAPORATION;

AMORPHOUS FILMS;

EID: 0035362402     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/6/310     Document Type: Article

References (13)