Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1106-1112

  Munindradasa, D A I ^a   Chhowalla, M ^a   Amaratunga, G A J ^a   Silva, S R P ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Electronic behaviour; Field emission; Heterojunctions

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRON EMISSION; ENERGY GAP; HETEROJUNCTIONS; HYDROGENATION; SILICON;

FIELD EMISSION; FOWLER-NORDHEIM TYPE TUNNELING; HYDROGENATED AMORPHOUS CARBON FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0032065204     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00206-3     Document Type: Article

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