Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 315-318

  Napierala, J ^a   Gil Lafon, E ^a   Castelluci, D ^a   Pimpinelli, A ^a   Gerard B ^b  

^a CNRS   (France)

^b THALES   (France)

Author keywords

GaAs; HVPE; Selective epitaxy; Wulff construction

Indexed keywords

CRYSTAL ORIENTATION; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SUPERSATURATION; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY; WULFF CONSTRUCTION;

SEMICONDUCTING FILMS;

EID: 0035360466     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00097-0     Document Type: Conference Paper

References (4)