High-quality GaAs-related lateral junctions on Si by conformal growth

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 267-270

  Gil Lafon, E ^a   Videcoq, A ^a   Napierala, J ^a   Castelluci, D ^a   Pimpinelli, A ^a   Gerard B ^b   Jimenez, J ^c   Avella, M ^c  

^a CNRS   (France)

^b THALES   (France)

^c UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Conformal epitaxy; GaAs Si; HVPE; Lateral modulation

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); HYDRIDES; MASKS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; VAPOR PHASE EPITAXY;

CONFORMAL EPITAXY; LATERAL MODULATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035361766     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00050-7     Document Type: Conference Paper

References (5)

1. Evolution of surface and thin film microstructures