ZnO growth toward optical devices by MOVPE using N2O

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 659-661

  Ogata, K ^a   Maejima, K ^a   Fujita, Sz ^a   Fujita, Sg ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Buffer layer; MOVPE; Photoluminescence; ZnO

Indexed keywords

BAND STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN OXIDES; NUCLEATION; OPTICAL DEVICES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

BANDGAP SEMICONDUCTORS; BUFFER LAYER; NITROUS OXIDES;

ZINC OXIDE;

EID: 0035360101     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02665851     Document Type: Article

References (15)