Pre- and post-breakdown switching behaviour in ultrathin SiO2 layers detected by C-AFM

Nanotechnology

Volumn 12, Issue 2, 2001, Pages 164-167

  Porti, M ^a   Blasco, X ^a   Nafria M ^a   Aymerich, X ^a   Olbrich, A ^b   Ebersberger, B ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC BREAKDOWN; SILICA;

POST-BREAKDOWN SWITCHING BEHAVIOR;

ULTRATHIN FILMS;

EID: 0035356974     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/12/2/319     Document Type: Conference Paper

References (13)