Nonlinear electron transport characteristics in ultrathin wires of recrystallized hydrogenated amorphous silicon

Applied Physics Letters

Volumn 73, Issue 7, 1998, Pages 972-974

  Ng, V ^a   Ahmed, H ^a   Shimada, T ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001723904     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122056     Document Type: Article

References (5)

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4. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, "A Room Temperature Single-Electron Memory Device Using Fine-Grain Polycrystalline Silicon," in IEDM (1993), pp. 21.2.1-21.2.4.
5. F. Wang, H. N. Liu, Y. L. He, A. Schweiger, and R. Schwarz, J. Non-Cryst. Solids 137&138, 511 (1991).