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Volumn 16, Issue 3, 2001, Pages 315-329

Surface roughness of sputtered silicon. II. Model verification

Author keywords

Beam profile; Dry etching; Dwell time; Focused ion beam; Intensity profile; Microfabrication; Micromachining; Micromilling; Micromolding; Microtools; Mod eling; Silicon; Sputtering; Surface finish; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; DRY ETCHING; ION BEAMS; MATHEMATICAL MODELS; MICROMACHINING; ROUGHNESS MEASUREMENT; SPUTTERING; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY;

EID: 0035342879     PISSN: 10426914     EISSN: None     Source Type: Journal    
DOI: 10.1081/AMP-100107377     Document Type: Article
Times cited : (13)

References (11)
  • 7
    • 0000951310 scopus 로고    scopus 로고
    • A novel procedure for measuring the absolute current density profile of a focused gallium-ion beam
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.18 , pp. 2764-2766
    • Wang, J.B.1    Wang, Y.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.