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Volumn 74, Issue 3, 1993, Pages 1979-1982
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Selective formation of an efficient Er-O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
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Author keywords
[No Author keywords available]
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Indexed keywords
CARBON;
CHEMICAL VAPOR DEPOSITION;
DOPING (ADDITIVES);
ELECTRON ENERGY LEVELS;
ELECTRON TRANSITIONS;
ENERGY GAP;
ERBIUM;
OXYGEN;
PHOTOLUMINESCENCE;
SEMICONDUCTOR GROWTH;
SPECTROSCOPIC ANALYSIS;
SUBSTITUTION REACTIONS;
CODOPING;
INTRA-4F-SHELL;
LUMINESCENCE CENTER;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
SECONDARY ION MASS SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0027640176
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.354757 Document Type: Article |
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Times cited : (123)
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References (0)
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