Growth of homogeneous In1-xGaxSb crystals by the graded solute concentration method

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 37-43

  Kinoshita, Kyoichi ^a,b   Kato, Hirokazu ^b   Matsumoto, Satoshi ^b   Yoda, Shin Ichi ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; MICROGRAVITY PROCESSING; PHASE INTERFACES; SEMICONDUCTOR GROWTH;

GRADED SOLUTE CONCENTRATION METHOD; INDIUM GALLIUM ANTIMONIDE; RESIDUAL ACCELERATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033692170     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00410-3     Document Type: Article

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