Directional solidification of InxGa1-xAs

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 471-477

  Hashio, Katsushi ^a   Tatsumi, Masami ^a   Kato, Hirokazu ^b   Kinoshita, Kyoichi ^b,c  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); NUCLEATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SOLIDIFICATION; SUPERCOOLING;

CONSTITUTIONAL SUPERCOOLING; DIRECTIONAL SOLIDIFICATION; UNIFORM COMPOSITION;

SINGLE CRYSTALS;

EID: 0033903308     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00812-X     Document Type: Article

References (10)

1. Otsubo K., Shoji H., Kusunoki T., Suzuki T., Uchida T., Nishijima Y., Ishikawa H. Electron. Lett. 33:1997;1795.
2. Ishikawa H. Appl. Phys. Lett. 63:1993;712.
3. Fujiwara S., Araki T., Tatsumi M., Irikura M., Matsumoto K., Murai S., Shirakawa T. J. Crystal Growth. 167:1996;357.
4. Kinoshita, Yamada T. J. Crystal Growth. 147:1995;91.
5. Sangwal K. Elementary Crystal Growth. 1994;33 Saan Publishers, Lublin.
6. H.U. Walter (Ed.), Fluid Science and Material Science in Space, European Space agency, 1987, p. 488.
7. Tiller W.A., Jackson K.A., Rutter J.W., Chalmers B. Acta Met. 1:1953;428.
8. Camel D., Favier J.J. J. Crystal Growth. 67:1984;42.
9. Garandet J.P., Duffar T., Favier J.J. J. Crystal Growth. 106:1990;437.
10. Fujiwara S., Tatsumi M., Murai S., Shirakawa T., Araki T., Irikura M. Trans. Mater. Res. Soc. Japan. 16A:1994;711.