Shape evolution of oxidized silicon V-grooves during high dose ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 109-114

  Muller T ^a   Heinig, K H ^a   Schmidt, B ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Ion beam synthesis; Ion induced surface modification; Re deposition; Sputtering; Surface evolution

Indexed keywords

ANISOTROPY; ANNEALING; CHEMICAL MODIFICATION; DRY ETCHING; ION IMPLANTATION; OXIDATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

ION BEAM SYNTHESIS; ION INDUCED SURFACE MODIFICATION;

SEMICONDUCTING SILICON;

EID: 0035338235     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00469-9     Document Type: Conference Paper

References (18)