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Volumn 11, Issue 3, 2001, Pages 277-282

A geometric etch-stop technology for bulk micromachining

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTALLINE MATERIALS; DRY ETCHING; LITHOGRAPHY; SILICON;

EID: 0035335917     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/11/3/318     Document Type: Article
Times cited : (7)

References (13)
  • 1
    • 0034274336 scopus 로고    scopus 로고
    • Study of convex-corner undercutting formed by masked-maskless etching in aqueous KOH
    • Li X et al 2000 Study of convex-corner undercutting formed by masked-maskless etching in aqueous KOH J. Micromech. Microeng. 10 309
    • (2000) J. Micromech. Microeng. , vol.10 , pp. 309
    • Li, X.1
  • 2
    • 0041636170 scopus 로고    scopus 로고
    • Design and processing experiments of a new miniaturized capacitive triaxial accelerometer
    • Puers R and Reyntjens S 1998 Design and processing experiments of a new miniaturized capacitive triaxial accelerometer Sensors Actuators A 68 324
    • (1998) Sensors Actuators A , vol.68 , pp. 324
    • Puers, R.1    Reyntjens, S.2
  • 4
    • 0029419192 scopus 로고
    • Advanced silicon etching using high density plasmas, micromachining and microfabrication process technology
    • Bhardwaj J K and Asharaf H 1995 Advanced silicon etching using high density plasmas, micromachining and microfabrication process technology Proc. SPIE 2639 224
    • (1995) Proc. SPIE , vol.2639 , pp. 224
    • Bhardwaj, J.K.1    Asharaf, H.2
  • 5
    • 0018506572 scopus 로고
    • The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol-water solutions
    • Reisman A et al 1979 The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol-water solutions J. Electrochem. Soc. 126 1406
    • (1979) J. Electrochem. Soc. , vol.126 , pp. 1406
    • Reisman, A.1
  • 6
    • 0000711468 scopus 로고
    • New test structure to identity step coverage mechanisms in chemical vapour deposition of silicon dioxide
    • Cheng L-Y et al 1991 New test structure to identity step coverage mechanisms in chemical vapour deposition of silicon dioxide Appl. Phys. Lett. 58 2147
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 2147
    • Cheng, L.-Y.1
  • 7
    • 0025683536 scopus 로고
    • Planarization of dielectrics used in the manufacture of very-large-scale integrated circuits
    • Malik F and Solanki R 1990 Planarization of dielectrics used in the manufacture of very-large-scale integrated circuits Thin Solid Films 193 1030
    • (1990) Thin Solid Films , vol.193 , pp. 1030
    • Malik, F.1    Solanki, R.2
  • 8
    • 0027836485 scopus 로고
    • Three-dimensional simulation of an isolation trench refill process
    • Liao H and Cale T S 1993 Three-dimensional simulation of an isolation trench refill process Thin Solid Films 236 352
    • (1993) Thin Solid Films , vol.236 , pp. 352
    • Liao, H.1    Cale, T.S.2
  • 9
    • 0039084183 scopus 로고
    • Simulation of the step coverage for chemical vapour deposited silicon dioxide
    • Wille H et al 1992 Simulation of the step coverage for chemical vapour deposited silicon dioxide J. Appl. Phys. 71 3532
    • (1992) J. Appl. Phys. , vol.71 , pp. 3532
    • Wille, H.1
  • 10
    • 0002730357 scopus 로고    scopus 로고
    • Etching characteristics and profile control in a time multiplexed inductively coupled plasma etcher
    • Ayon A A et al 1998 Etching characteristics and profile control in a time multiplexed inductively coupled plasma etcher Proc. of Solid-State Sensor Actuator Workshop, (Hilton Head, SC, USA) p 41
    • (1998) Proc. of Solid-state Sensor Actuator Workshop, (Hilton Head, SC, USA) , pp. 41
    • Ayon, A.A.1
  • 11
    • 0032753082 scopus 로고    scopus 로고
    • Characterization of a time multiplexed inductively coupled plasma etcher
    • Ayon A A et al 1999 Characterization of a time multiplexed inductively coupled plasma etcher J. Electrochem. Soc. 146 339
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 339
    • Ayon, A.A.1
  • 12
    • 0029253905 scopus 로고
    • Selectivity and Si-load in deep trench etching
    • Muller K P 1995 Selectivity and Si-load in deep trench etching Microelectron. Eng. 27 457
    • (1995) Microelectron. Eng. , vol.27 , pp. 457
    • Muller, K.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.