Solid state reaction in Si-C multilayers induced by ion bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 166, Issue , 2000, Pages 385-389

  Harbsmeier, F ^a   Bolse, W ^b   Flank, A M ^c  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c SYNCHROTRON SOLEIL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLIZATION; ION BEAMS; ION BOMBARDMENT; MULTILAYERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; X RAY SPECTROSCOPY;

ION BEAM MIXING; SOLID STATE REACTION;

SEMICONDUCTING FILMS;

EID: 0033745619     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)01169-6     Document Type: Article

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