Diamond emitter arrays with uniform self-aligned gate built from silicon-on-insulator wafer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 971-974

  Wisitsora at, A ^a   Kang, W P ^a   Davidson, J L ^a   Kerns, D V ^a   Kerns, S E ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MICROELECTRONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING DIAMONDS; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SPUTTER DEPOSITION; TRIODES;

DIAMOND FIELD EMITTER ARRAYS; ELECTRON EMITTERS;

ELECTRON EMISSION;

EID: 0035326443     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1370175     Document Type: Conference Paper

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