100 nm gate hole openings for low voltage driving field emission display applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 900-903

  Choi, J O ^a   Akinwande, A I ^b   Smith, H I ^b  

^a Ajou University   (South Korea)

^b USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; COMPUTER SIMULATION; CURRENT DENSITY; FIELD EMISSION CATHODES; LASER APPLICATIONS; LITHOGRAPHY; MOLYBDENUM; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; ULTRAHIGH VACUUM;

LASER INTERFERENCE LITHOGRAPHY (LIL);

FIELD EMISSION DISPLAYS;

EID: 0035326434     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1375821     Document Type: Conference Paper

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