Theoretical study of the threshold field for field electron emission from amorphous diamond thin films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 1059-1063

  Xu, N S ^a   She, J C ^a   Huq, S E ^b   Deng, S Z ^a   Chen, J ^a  

^a SUN YAT SEN UNIVERSITY   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND FILMS; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; MICROELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

AMORPHOUS DIAMOND THIN FILMS;

THIN FILMS;

EID: 0035326401     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1352721     Document Type: Conference Paper

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