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Volumn 146, Issue 1, 1999, Pages 126-133

Use of internal field emission to inject electronic charge carriers into the conduction band of diamond films: A review

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRON EMISSION; ELECTRON SOURCES; ELECTRON TUNNELING; ENERGY GAP; FIELD EMISSION CATHODES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS;

EID: 0032652769     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00017-3     Document Type: Article
Times cited : (43)

References (20)
  • 4
    • 0029754790 scopus 로고    scopus 로고
    • Materials Research Society
    • Pryor R.W. Mater. Sci. Symp. Proc. 416:1996;425. Materials Research Society.
    • (1996) Mater. Sci. Symp. Proc. , vol.416 , pp. 425
    • Pryor, R.W.1
  • 6
    • 0003581890 scopus 로고
    • in: M. Prelas, P. Gielisse, G. Popovici, B.V. Spitsyn, T. Stacy (Eds.), Kluwer, Dordrecht
    • G. Popovici, M. Prelas, in: M. Prelas, P. Gielisse, G. Popovici, B.V. Spitsyn, T. Stacy (Eds.), Wide Band Gap Electronic Materials, Kluwer, Dordrecht, 1995.
    • (1995) Wide Band Gap Electronic Materials
    • Popovici, G.1    Prelas, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.