Integration of piezoelectric (Pb,La)TiO3 on (100)InP by using a CeO2 buffer layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 812-817

  Vasco, E ^a   Vazquez L ^a   Zaldo, C ^a   Coya, C ^b   Kling, A ^c   Soares, J C ^c  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSIDAD REY JUAN CARLOS   (Spain)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ENERGY GAP; FILM GROWTH; MULTILAYERS; OXYGEN; PULSED LASER DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; STOICHIOMETRY; SUBSTRATES;

BUFFER LAYERS;

PIEZOELECTRIC MATERIALS;

EID: 0035326378     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (32)

1. S. Adachi, J. Appl. Phys. 53, 5863 (1982).
2. M. Sugo, H. Mori, M. Tachikawa, Y. Itoh, and M. Yamamoto, Appl. Phys. Lett. 57, 593 (1990).
3. N. A. Paraire, N. Moresmau, S. F. Chen, P. Dansas, and F. Bertrand, Appl. Opt. 36, 2545 (1997).
4. S. Maimon, G. M. Cohen, E. Finkman, G. Bahir, D. Ritter, and S. E. Schacham, Appl. Phys. Lett. 73, 800 (1998).
5. R. Kochhar, W. Y. Hwang, M. Micovic, T. S. Mayer, D. L. Miller, and S. M. Lord, J. Vac. Sci. Technol. B 15, 316 (1997).
6. Y. I. Nagatsuma, H. Takeuchi, and S. Jyomura, J. Appl. Phys. 52, 4479 (1981).
7. H. Takeuchi, Ceram. Bull. 71, 974 (1992).
8. D. Garcia and J. A. Eiras, Ferroelectrics 123, 51 (1991).
9. J. S. Horwitz, K. S. Grabowski, D. B. Chrisey, and R. E. Leuchtner, Appl. Phys. Lett. 59, 1565 (1991).
10. G. Hollinger, E. Bergignat, J. Joseph, and Y. Robach, J. Vac. Sci. Technol. A 3, 2082 (1985).
11. N. Shibata and H. Ikoma, Jpn. J. Appl. Phys., Part 1 32, 1197 (1993).
12. R. F. C. Farrow, J. Phys. D 7, L121 (1974).
13. Y. Shichi, S. Tanimoto, T. Goto, K. Kuroiwa, and Y. Tarai, Jpn. J. Appl. Phys., Part 1 33, 5172 (1994).
14. E. Vasco, L. Vázquez, and C. Zaldo, Appl. Phys. A: Mater. Sci. Process. 69, 5827(1999).
15. K. B. Sundaram, P. F. Wahid, and P. J. Sisk, Thin Solid Films 221, 13 (1992).
16. T. Inoue, Y. Yamamoto, S. Koyama, S. Suzuki, and Y. Ueda, Appl. Phys. Lett. 56, 1332 (1990).
17. M. Yoshimoto et al., Jpn. J. Appl. Phys., Part 2 34, L688 (1995).
18. M. Yoshimoto, H. Nagata, T. Tsukahara, and H. Koinuma, Jpn. J. Appl. Phys., Part 2 29, L1199 (1990).
19. F. Sanchéz, M. Varela, C. Ferrater, M. V. García-Cuenca, R. Aguiar, and J. L. Morenza, Appl. Surf. Sci. 70/71, 94 (1993).
20. K. Nashimoto, D. Fork, and T. H. Geballe, Appl. Phys. Lett. 60, 1199 (1992).
21. R. H. Williams, R. R. Varna, and A. McKinley, J. Phys. C 10, 4545 (1977).
22. T. Sugino, K. Hawarai, M. Maeda, and J. Shirafuji, J. Cryst. Growth 139, 15 (1994).
23. E. Vasco, L. Vázquez, M. Aguiló, and C. Zaldo, J. Cryst. Growth 209, 883 (2000).
24. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9, 334 (1984).
25. R. G. Schwab, R. A. Steiner, G. Mages, and H. J. Beie, Thin Solid Films 207, 288 (1992).
26. V. Trtík, F. Sánchez, R. Aguiar, Y. Maniette, C. Ferrater, and M. Varela, Appl. Phys. A: Mater. Sci. Process. 67, 455 (1998).
27. J. R. Sims and R. N. Blumenthal, High. Temp. Sci. 8, 99 (1976).
28. B. Touzelin, J. Nucl. Mater. 101, 92 (1981).
29. M. J. Martín, J. Mendiola, and C. Zaldo, J. Am. Ceram. Soc. 81, 2542 (1998).
30. D. Fenner, A. Viano, D. Fork, G. Connell, J. Boyce, F. Ponce, and J. Tramontana, J. Appl. Phys. 69, 2176 (1991).
31. E. J. Tarsa, K. L. McCormick, and J. S. Speck, Mater. Res. Soc. Symp. Proc. 341, 73 (1994).
32. N. Shibata and H. Ikoma, Jpn. J. Appl. Phys., Part 1 31, 3976 (1992).