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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 2, 1997, Pages 316-320

Molecular beam epitaxy of highly mismatched In073Ga027As on InP for near-infrared photodetectors

(6) Kochhar, R a,c Hwang, W Y a,d Micovic, M a Mayer, T S a Miller, D L a Lord, S M b

a The Pennsylvania State University (United States)

b BUCKNELL UNIVERSITY (United States)

c INTEL CORPORATION (United States)

d NOKIA RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003547224 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (3)

References (17)

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