Analysis of the surface base current drift in GaAs HBT's

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1903-1906

  Maneux, C ^a   Labat, N ^a   Saysset, N ^a   Touboul, A ^a   Danto, Y ^a   Dangla, J ^b   Launay, P ^b   Dumas, J M ^c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b ORANGE LABS   (France)

^c UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC FIELD EFFECTS; ELECTROMIGRATION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PASSIVATION; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; STRESS ANALYSIS; X RAY ANALYSIS;

FIELD INDUCED DEGRADATION MECHANISM; SURFACE BASE CURRENT DRIFT; ENERGY DISPERSIVE X RAY (EDX) ANALYSIS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030274041     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00225-9     Document Type: Article

References (6)

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3. P. Launay, R. Driad, J-L. Benchinol, F. Alexandre, J. Dangla, GaInP-GaAs quasi self-aligned HBT Tehnology, Proc. of ESSDERC 94, 439-442 (1994).
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6. N. Labat, Y. Danto, B. Plano, M. Chambon, J.M. Dumas, Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate by high resolution transmission electron microscopy analysis, Material Science and Engineering, Vol. B20, 33-36 (1993).