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Materials Science and Technology

Volumn 12, Issue 1, 1996, Pages 94-97

Electrical characterisation of epitaxial 6H-SiC by admittance spectroscopy

(8) Raynaud, C a Ducroquet, F a Brounkov, P N a,b Guillot, G a Porter, L M c Davis, R F c Jaussaud, C d Billon, T d

a Lab de Phys de la Matière (France)

b IOFFE INSTITUTE (Russian Federation)

c North Carolina State University (United States)

d CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042079899 PISSN: 02670836 EISSN: None Source Type: Journal
DOI: 10.1179/mst.1996.12.1.94 Document Type: Article

Times cited : (5)

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