Theoretical study of carrier freeze-out effects on admittance spectroscopy and frequency-dependent C-V measurements in SiC

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Los, Andrei V ^a   Mazzola, Michael S ^a   Saddow, Stephen E ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRIC ADMITTANCE; ELECTRIC SPACE CHARGE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON CARBIDE; STATISTICS; VOLTAGE MEASUREMENT;

SCHOTTKY JUNCTIONS; SHOCKLEY-READ-HALL STATISTICS; SMALL-SIGNAL APPROXIMATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0033706085     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)