SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 224, Issue 1-2, 2001, Pages 32-40

Photoluminescence studies of ZnSe starting materials and vapor grown bulk crystals

(4) Su, Ching Hua a Feth, S a Wang, Ling Jun b Lehoczky, S L a

a NASA MARSHALL SPACE FLIGHT CENTER (United States)

b UNIVERSITY OF TENNESSEE AT CHATTANOOGA (United States)

Author keywords

A1. Characterization; A2. Growth from vapor; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

CONTAMINATION; MASS SPECTROMETRY; PHOTOLUMINESCENCE; PURIFICATION; VAPOR PHASE EPITAXY;

ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035309442 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00770-9 Document Type: Article

Times cited : (20)

References (39)

1
- 0000501319
- (1998) J. Crystal Growth , vol.192 , pp. 386
- Su, C.-H.¹ Palosz, W.² Feth, S.³ Lehoczky, S.L.⁴

2
- 0025412833
- (1990) J. Crystal Growth , vol.101 , pp. 221
- Su, C.-H.¹ Lehoczky, S.L.² Szofran, F.R.³

3
- 0027557940
- (1993) J. Crystal Growth , vol.128 , pp. 627
- Su, C.-H.¹ Volz, M.P.² Gillies, D.C.³ Szofran, F.R.⁴ Lehoczky, S.L.⁵ Dudley, M.⁶ Yao, G.D.⁷ Zhou, W.⁸

4
- 0346424924
- (1997) Proceedings of the SPIE - The International Society for Optical Engineering , vol.3123 , pp. 7
- Su, C.-H.¹

5
- 0001510220
- (2000) J. Crystal Growth , vol.213 , pp. 267
- Su, C.-H.¹ George, M.A.² Palosz, W.³ Feth, S.⁴ Lehoczky, S.L.⁵

6
- 0033514128
- (1999) J. Crystal Growth , vol.197 , pp. 449
- Korostelin, Yu.V.¹ Kozlovsky, V.I.² Nasibov, A.S.³ Shapkin, P.V.⁴

7
- 36449004990
- (1991) Appl. Phys. Lett. , vol.59 , pp. 2992
- Qiu, J.¹ Depudyt, J.M.² Cheng, H.³ Hasse, M.A.⁴

8
- 36449007753
- (1992) Appl. Phys. Lett. , vol.61 , pp. 2671
- Yang, Z.¹ Bowers, K.A.² Ren, J.³ Lansari, Y.⁴ Cook J.W., Jr.⁵ Schetzina, J.F.⁶

9
- 0028760586
- (1994) J. Crystal Growth , vol.138 , pp. 290
- Yao, T.¹ Matsumoto, T.² Sasaki, S.³ Chung, C.K.⁴ Zhu, Z.⁵ Nishiyama, F.⁶

10
- 36449003524
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1914
- Baume, P.¹ Gutowski, J.² Wiesmann, D.³ Heitz, R.⁴ Hoffmann, A.⁵ Kurtz, E.⁶ Hommel, D.⁷ Landwehr, G.⁸

11
- 0030562279
- (1996) J. Crystal Growth , vol.159 , pp. 252
- Baume, P.¹ Gutowski, J.² Kurtz, E.³ Hommel, D.⁴ Landwehr, G.⁵

12
- 0029408446
- (1995) Appl. Phys. Lett. , vol.67 , pp. 3307
- Kothandaraman, C.¹ Neumark, G.F.² Park, R.M.³

13
- 0030562209
- (1996) J. Crystal Growth , vol.159 , pp. 298
- Kothandaraman, C.¹ Neumark, G.F.² Park, R.M.³

14
- 0000172673
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1523
- Kothandaraman, C.¹ Kuskovsky, I.² Neumark, G.F.³ Park, R.M.⁴

15
- 0001148193
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1724
- Moldovan, M.¹ Setzler, S.D.² Myers, T.H.³ Halliburton, L.E.⁴ Giles, N.C.⁵

16
- 0021628241
- (1984) Appl. Phys. Lett. , vol.45 , pp. 1300
- Yoneda, K.¹ Hishida, Y.² Toda, T.³ Ishii, H.⁴ Niina, T.⁵

17
- 0001647930
- (1989) Appl. Phys. Lett. , vol.54 , pp. 353
- Giapis, K.P.¹ Lu, D.-C.² Jensen, K.F.³

18
- 0000635150
- (1972) Phys. Rev. B , vol.6 , pp. 545
- Merz, J.L.¹ Kukimoto, H.² Nassau, K.³ Shiever, J.W.⁴

19
- 36449007571
- (1995) Appl. Phys. Lett. , vol.67 , pp. 3762
- Zhu, Z.¹ Brownlie, G.D.² Thompson, P.J.³ Prior, K.K.⁴ Cavenett, B.C.⁵

20
- 0005074559
- (1985) J. Crystal Growth , vol.72 , pp. 162
- Isshiki, M.¹ Yoshida, T.² Igaki, K.³ Uchida, W.⁴ Suto, S.⁵

21
- 0000438191
- (1985) J. Crystal Growth , vol.73 , pp. 221
- Isshiki, M.¹ Yoshida, T.² Tomizono, T.³ Satoh, S.⁴ Igaki, K.⁵

22
- 0000063314
- (1981) Phys. Rev. , vol.23 , pp. 4888
- Dean, P.J.¹ Herbert, D.C.² Werkhoven, C.J.³ Fitzpatrick, B.J.⁴ Bhargava, R.N.⁵

23
- 3743069929
- (1973) Phys. Rev. B , vol.8 , pp. 1444
- Merz, J.L.¹ Nassau, K.² Shiever, J.W.³

24
- 0016543590
- (1975) J. Appl. Phys. , vol.46 , pp. 3549
- Bouley, J.C.¹ Blanconnier, P.² Herman, A.³ Ged, Ph.⁴ Henoc, P.⁵ Noblanc, J.P.⁶

25
- 0020790336
- (1983) Jpn. J. Appl. Phys. , vol.22
- Huang, S.-M.¹ Nozue, Y.² Igaki, K.³

26
- 0000587030
- (1996) J. Appl. Phys. , vol.80 , pp. 2983
- Tournie, E.¹ Morhain, C.² Neu, G.³ Laugt, M.⁴ Ongaretto, C.⁵ Faurie, J.-P.⁶ Triboulet, R.⁷ Ndap, J.O.⁸

27
- 0025522701
- (1990) J. Electrochem. Soc. , vol.137 , pp. 3544
- Tajima, M.¹ Masui, T.² Itoh, D.³ Nishino, T.⁴

28
- 0026123878
- (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 515
- Isshiki, M.¹ Masumoto, K.² Uchida, W.³ Satoh, S.⁴

29
- 0032677958
- (1999) J. Crystal Growth , vol.204 , pp. 41
- Su, C.-H.¹ Feth, S.² Hirschfeld, D.³ Smith, T.M.⁴ Wang, L.J.⁵ Volz, M.P.⁶ Lehoczky, S.L.⁷

30
- 0005043546
- (1980) Czech. J. Phys. , vol.B30 , pp. 272
- Dean, P.J.¹

31
- 0005080189
- (1981) J. Phys. , vol.C14 , pp. 5545
- Patel, J.L.¹ Davies, J.J.² Nicholls, J.E.³

32
- 0000607593
- (1968) Phys. Rev. , vol.171 , pp. 903
- Stringfellow, G.B.¹ Bube, R.H.²

33
- 0017675150
- (1977) J. Appl. Phys. , vol.48 , pp. 5122
- Grimmeiss, H.G.¹ Ovren, C.²

34
- 0001132448
- (1993) J. Appl. Phys. , vol.73 , pp. 1146
- Zhu, Z.¹ Mori, H.² Yao, T.³

35
- 0024605986
- (1989) J. Crystal Growth , vol.95 , pp. 512
- Cheng, H.¹ DePuydt, J.M.² Potts, J.E.³ Haase, M.A.⁴

36
- 0023165571
- (1988) J. Crystal Growth , vol.86 , pp. 318
- DePuydt, J.M.¹ Smith, T.L.² Potts, J.E.³ Cheng, H.⁴ Mohapatra, S.K.⁵

37
- 0000710089
- (1989) Phys. Rev. B , vol.17 , pp. 13016
- Shahzad, K.¹ Olego, D.J.² Cammack, D.³

38
- 0023166671
- (1988) J. Crystal Growth , vol.86 , pp. 273
- Yodo, T.¹ Koyama, T.² Yamashita, K.³

39
- 0001253468
- (1990) J. Appl. Phys. , vol.67 , pp. 448
- Haase, M.A.¹ Cheng, H.² DePuydt, J.M.³ Potts, J.E.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.