Point defect distributions in ZnSe crystals: Effects of gravity vector orientation during physical vapor transport growth

Journal of Crystal Growth

Volumn 204, Issue 1, 1999, Pages 41-51

  Su, Ching Hua ^a   Feth, S ^a   Hirschfeld, D ^b   Smith, T M ^b   Jun Wang, Ling ^c   Volz, M P ^a   Lehoczky, S L ^a  

^a NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^b NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

^c UNIVERSITY OF TENNESSEE AT CHATTANOOGA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; PARTIAL PRESSURE; PHOTOLUMINESCENCE; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY;

PHYSICAL VAPOR TRANSPORT (PVT) GROWTH;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032677958     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00187-6     Document Type: Article

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