Compensation in heavily N-doped ZnSe: A luminescence study

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 298-301

  Kothandaraman, C ^a   Neumark, G F ^a   Park, R M ^b  

^a Och Spine at New York Presbyterian Hospitals   (United States)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CHARGE CARRIERS; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; ENERGY GAP; IONS; LUMINESCENCE; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; QUENCHING; SPECTROSCOPY;

BAND GAP; EXCITATION SPECTROSCOPY; IMPURITY LEVELS; THERMALISATION;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562209     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00815-2     Document Type: Article

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18. -3, which are reasonable estimates. The peak position is obtained using Eq. (3).