I// noise in InGaAs/GaAs linear graded buffer layers

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1201-1206

  Valtuena, Juan Francisco ^a   Garrido, Jose Antonio ^a   Izpura, José Ignacio ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Buffer layer; Dislocations; Grain boundaries; Hooge parameter; Noise sources; Scattering

Indexed keywords

BUFFER CIRCUITS; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SPURIOUS SIGNAL NOISE;

HIGH DISLOCATION DENSITY (HDD); HOOGE PARAMETERS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032099758     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678512     Document Type: Article

References (19)

1. R. Beanland, D. J. Dunstan, and P. J. Goodhew, "Plastic relaxation and relaxed buffer layers for semiconductor epitaxy," Adv. Phys., vol. 45, p. 87, 1996.
2. Y. Uchida, T. Mishima, T. Tanoue, M. Takahama, and S. Takahashi, "Study of electrical activation in strained InGaAs/GaAs heterostructures," in Int. Symp. GaAs and Relat. Compounds 1989, Inst. Phy. Conf. Ser., ch. 6, no. 106.
3. K. M. van Vliet, "Noise in semiconductors and photoconductors," in P roc. IRE, vol. 44, p. 1004, June 1958.
4. A. J. Madenach and J. H. Werner, "Noise spectroscopy of silicon grain boundaries," Phys. Rev. B. vol. 38, p. 13150, 1988.
5. H. I. Hanafi and A. Van der Ziel, "Flicker noise due to grain boundaries in n-type HgCdTe," Solid State Electron., vol. 21, p. 1019, 1978.
6. J. F. Valtuena, A. Sacedön, A. L. Alvarez, I. Izpura, E. Calleja, G. MacPherson, P. J. Goodhew, F. J. Pacheco, R. Garcia, and S. I. Molina, "Influence of the surface morphology on the relaxation of low strained InGaAs linear buffer structures," J. Cryst. Growth, vol. 182, p. 281, 1997.
7. C. M. Van Vliet, "A survey of results and future prospects on quantum I// noise and I// noise in general," Solid State Electron., vol. 34, p. 1, 1991.
8. G. S. Kousik, C. M. van Vliet, G. Bosman, and P. H. Handel, "Quantum I// noise asociated with ionized impurity scattering and electronphonon scattering in condensed matter," Adv. Phys., vol. 34, p. 663, 1985.
9. A. van der Ziel "Unified presentation of I// noise in electronic devices: Fundamental I// noise sources," Proc. IEEE, vol. 76, p. 233, 1988.
10. F. N. Hooge, "I// noise sources," IEEE Trans. Electron Devices, vol. 41, p. 1926, Nov. 1994.
11. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, "Ex-perimental studies on I// noise," Rep. Prog. Phys., vol. 44, p. 479, 1981.
12. F. N. Hooge, "I// is no surface effect," Phys. Lett., vol. A-29, p. 139, 1969.
13. F. N. Hooge and L. K. J. Vandamme, "Lattice scatering causes l// noise," Phys. Lett., vol. A-66, p. 315, 1978.
14. J. W. Orton and M. J. Powell, "The Hall effect in polycrystalline and powered semiconductors," Rep. Prog. Phys., vol. 43, p. 1263, 1980.
15. S. R. Bahl, J. Azzam, and J. A. del Alamo, "Orientation dependence of mismatched InAlAs/InGaAs HFET's," J. Cryst. Growth, vol. Ill, p. 479, 1991.
16. M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B-Y. Tsaur, and A. R. Calawa, "Structural properties or As-rich GaAs grown by molecular beam epitaxy at low temperature," Appl. Phys. Lett., vol. 54, p. 1881, 1989.
17. V. Swaminathan and A. T. Macrander, "Materials aspects of GaAs and InP based structures," in Advanced Reference Series. London, U.K.: Prentice-Hall, 1991.
18. M.-Y. Low and G. Bosman, "An analitical model for I// noise in polycrystalline silicon thin films," IEEE Trans. Electron Devices, vol. 37, p. 768, Apr. 1990.
19. For charged or neutral centers: H. Putley The Hall Effect and Related Phenomena. London, U.K.: Butterworth, 1960