High-yield processing and single-mode operation of passive antiguide region vertical-cavity lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 429-434

  Wu, Y A ^a,b,f,g   Li, Gabriel S ^a,b,e   Yuen, Wupen ^a,c,e   Caneau, C ^d   Chang Hasnain, Constance J ^a,e  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Stanford University   (United States)

^d TELCORDIA TECHNOLOGIES   (United States)

^e IEEE

^f UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^g Lasertron Inc   (United States)

Author keywords

Antiguide; Beam propagation; High yield; Ingle mode; Mode selection; PAR; Process control; SEL; Semiconductor laser; VCSEL

Indexed keywords

CONTINUOUS WAVE LASERS; ETCHING; LASER MODES; LEAKAGE CURRENTS; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE; THERMOOXIDATION;

PASSIVE ANTIGUIDE REGION (PAR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031108498     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605689     Document Type: Article

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