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Volumn 298, Issue 1-4, 2001, Pages 496-500

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Author keywords

IQHE; SiGe; Universal scaling; Weak localisation

Indexed keywords

ELECTRON ENERGY LEVELS; HALL EFFECT; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

INTER-QUANTUM HALL EFFECTS (IQHE);

HETEROJUNCTIONS;

EID: 0035304751 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00370-2 Document Type: Article

Times cited : (10)

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