Re-entrant metal-insulator transitions in Si-SiGe-Si heterostructures

Surface Science

Volumn 361-362, Issue , 1996, Pages 937-940

  D'Iorio, M ^a   Stewart, D ^a   Deblois, S ^a   Brown, D ^a   Noel J P ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Electrical transport; Electrical transport measurements; Magnetic phenomena; Quantum effects; Quantum wells; Semiconductor semiconductor heterostructures; Silicon germanium

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; MAGNETISM; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT MEASUREMENT; MAGNETIC PHENOMENA; QUANTUM EFFECTS; REENTRANT METAL INSULATOR TRANSITIONS;

HETEROJUNCTIONS;

EID: 18244426635     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00569-9     Document Type: Article

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