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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 454-458

Characterization of Mg+-implanted InP by Raman spectroscopy

(5) Ibanez J a Cusco R a Blanco, N b Gonzalez Diaz G b Artus L a

a INSTITUTE OF EARTH SCIENCES JAUME ALMERA (Spain)

b UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

Ion beam implantation; Lattice damage; Raman scattering

Indexed keywords

AMORPHIZATION; COMPOSITION EFFECTS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ION BEAMS; ION IMPLANTATION; IRON; MAGNESIUM; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING;

LATTICE DISORDER;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033513890 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00720-4 Document Type: Article

Times cited : (6)

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