Study of Si+-implanted and annealed InP by means of Raman spectroscopy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 132, Issue 4, 1997, Pages 627-632

  Cusco R ^a   Ibanez J ^a   Blanco, N ^b   Gonzalez Diaz G ^b   Artus L ^a  

^a INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Ion beam implantation; Raman spectroscopy; Rapid thermal annealing

Indexed keywords

ANNEALING; ION BOMBARDMENT; ION IMPLANTATION; RAMAN SPECTROSCOPY;

RAPID THERMAL ANNEALING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031376280     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00512-0     Document Type: Article

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