Quantitative depth profiles of vacancy cluster defects produced by MeV ion implantation in Si: Species and dose dependence

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

  Kalyanaraman, R ^a   Haynes, T E ^a   Jacobson, D C ^a   Gossmann, H J ^a   Rafferty, C S ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BORON; COMPUTER SIMULATION; ESTIMATION; GERMANIUM; ION IMPLANTATION; MONTE CARLO METHODS;

DOSE DEPENDENCE; KINCHEN-PEASE APPROXIMATION; QUANTITATIVE DEPTH PROFILE; VACANCY CLUSTER DEFECT;

SILICON;

EID: 0034438364     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)