Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 6, 1996, Pages 451-454

  Kang, Myeon Koo ^a,b   Matsui, Takayuki ^a   Kuwano, Hiroshi ^a  

^a KEIO UNIVERSITY   (Japan)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; COMPOSITION EFFECTS; CRYSTALLIZATION; ELECTRIC PROPERTIES; FILM GROWTH; GERMANIUM; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; ION IMPLANTATION; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING;

CRYSTALLINITY; GRAIN BOUNDARY BARRIER HEIGHT; GROWTH RATE; POLYCRYSTALLINE SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0030381730     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00180785     Document Type: Article

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